A Closed-form Analytic Model for Ild Thickness Variation in Cmp Processes

نویسندگان

  • B. Stine
  • D. Ouma
  • R. Divecha
  • D. Boning
  • J. Chung
چکیده

CMP planarization of oxide results in excellent long-range uniformity compared to other planarization techniques but remains hampered by systematic pattern sensiti vities. In the recent literature, se veral semi-empirical or physically-based models have been proposed to explain ILD thickness pattern sensitivities in CMP, but all of these models either fail to predict key empirical results, are not described fully, or do not present tractable closed form models. In this paper , we develop and derive a closed form model for ILD thickness variation and verify this model on datasets obtained o ver different polishing tools, consumable sets, and process conditions, and as a function of polishing time.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Using a Statistical Metrology Framework to Identify Systematic and Random Sources of Die- and Wafer-level ILD Thickness Variation in CMP Processes

A statistical metrology framework is used to identify systematic and random sources of interconnect structure (ILD thickness) variation. Electrical and physical measurements, TCAD simulations, design of experiments, signal processing, and statistical analysis are integrated via statistical metrology to deconvolve ILD thickness variation into constituent variation sources. In this way, insight i...

متن کامل

Assessing and Characterizing Inter- and Intra-die Variation Using a Statistical Metrology Framework: A CMP Case Study

A statistical metrology methodology has been developed and used to study the contributions to spatial variation in ILD thickness remaining after chemical-mechanical polishing. New elements of statistical metrology are described, including a three-phase experimental approach and the use of a modified repeated measure analysis of variance technique.

متن کامل

A Fixed Abrasive CMP Model

Chemical mechanical polishing (CMP) has emerged as the planarization technique of choice in both front-end (STI) and back-end (ILD) integrated circuit manufacturing. Conventional CMP processes utilize a polyurethane polishing pad and liquid chemical slurry containing abrasive particles. More recent work has examined the use of a fixed abrasive CMP pad [1], in which abrasive material is embedded...

متن کامل

A Modification to Preston’s Equation and Impact on Pattern Density Effect Modeling

We have shown that the removal rate of blanket oxide layers does not follow Preston’s law strictly. There exist two polishing regimes which are distinguished by the magnitude of the pressure and relative velocity product, pv. For large pv typically used for polishing, a constant term should be added to the Preston term for better fit to experimental data. The modified Preston’s equation has bee...

متن کامل

Exact Elasticity Solutions for Thick-Walled FG Spherical Pressure Vessels with Linearly and Exponentially Varying Properties

In this paper, exact closed-form solutions for displacement and stress components of thick-walled functionally graded (FG) spherical pressure vessels are presented. To this aim, linear variation of properties, as an important case of the known power-law function model is used to describe the FG material distribution in thickness direction. Unlike the pervious studies, the vessels can have arbit...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 1997